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PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 03 -- 11 December 2009 Product data sheet
1. Product profile
1.1 General description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V.
1.2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
Major application segments: Automotive Telecom infrastructure Industrial Power management: DC-to-DC conversion Supply line switching Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance t = 1 ms or limited by Tj(max) IC = 1 A; IB = 100 mA
[2]
Conditions open base
[1]
Min -
Typ 200
Max Unit 60 1 2 250 V A A m
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, 1 cm2 collector mounting pad. Pulse test: tp 300 s; 0.02.
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter
6 5 4 3 4 1 2 3
sym014
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3. Ordering information Package Name PBSS4160V Description plastic surface mounted package; 6 leads Version SOT666 Type number
4. Marking
Table 4. Marking codes Marking code 41 Type number PBSS4160V
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
2 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tamb Tstg
[1] [2]
Parameter collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current
Conditions open base open collector
[1] [2]
Min -
Max 80 60 5 0.9 1 2 300 1 300 500 150 +150 +150
Unit V V V A A mA A mW mW C C C
collector-base voltage open emitter
t = 1 ms or limited by Tj(max) tp 300 s; 0.02
[1] [2]
-65 -65
total power dissipation Tamb 25 C junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
0.6 Ptot (W)
(1)
001aaa714
0.4
(2)
0.2
0 0 40 80 120 160 Tamb (C)
(1) FR4 PCB; 1 cm2 collector mounting pad (2) FR4 PCB; standard footprint
Fig 1.
Power derating curves
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
3 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2]
Min Typ Max Unit 415 K/W 250 K/W
[1] [2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
103 Zth (K/W) 102
(1) (2) (3) (4) (5) (6) (7)
001aaa715
10
(8) (9) (10)
1
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 PCB; standard footprint (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
4 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current collector-emitter cut-off current Conditions VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 C VCE = 60 V; VBE = 0 V Min 250
[1] [1]
Typ 400 350 150 90 110 200 0.95 200 0.82 11 78 90 340 160 500 220 5.5
Max 100 50 100 100 110 140 250 1.1 250 0.9 10
Unit nA A nA nA
ICES IEBO hFE
emitter-base cut-off VEB = 5 V; IC = 0 A current DC current gain VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A
200 100 -
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA
[1]
mV mV mV V m V ns ns ns ns ns ns MHz pF
-
VBEsat RCEsat VBEon td tr ton ts tf toff fT Cc
[1]
base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time
IC = 1 A; IB = 50 mA IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = -25 mA
[1]
150 -
transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz
Pulse test: tp 300 s; 0.02.
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
5 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
800 hFE 600
(1)
mle130
1.2 VBE (V)
(1)
mle133
0.8
(2)
(2) (3)
400
(3)
0.4
200
0 10-1
1
10
102
103 104 IC (mA)
0 10-1
1
10
102
103 104 IC (mA)
VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
VCE = 5 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 3.
DC current gain as a function of collector current; typical values
mle135
Fig 4.
Base-emitter voltage as a function of collector current; typical values
mle104
1 VCEsat (V) 10-1
1
VCEsat (V)
10-1
(2) (1)
10-2
(3)
(1) (3) (2)
10-3 10-1
1
10
102
103 104 IC (mA)
10-2 10-1
1
10
102
103 104 IC (mA)
IC/IB = 10 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 5.
Collector-emitter saturation voltage as a function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a function of collector current; typical values
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
6 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
1 VCEsat (V)
mle129
1.2 VBEsat (V)
mle134
(1) (2)
0.8
(1)
(3)
10-1
(2)
0.4
10-2 10-1
1
10
102
103 104 IC (mA)
0 10-1
1
10
102
103 104 IC (mA)
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 7.
Collector-emitter saturation voltage as a function of collector current; typical values
Fig 8.
Base-emitter saturation voltage as a function of collector current; typical values
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
7 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
2 IC (A) 1.6
mle131 (6) (5) (4) (3) (2) (1)
103 RCEsat () 102
mle132
(7)
1.2
(8) (9) (10)
10
0.8
1 0.4
(2) (1) (3)
0 0 1 2 3 4 VCE (V) 5
10-1
10-1
1
10
102
103 104 IC (mA)
Tamb = 25 C (1) IB = 60 mA (2) IB = 54 mA (3) IB = 48 mA (4) IB = 42 mA (5) IB = 36 mA (6) IB = 30 mA (7) IB = 24 mA (8) IB = 18 mA (9) IB = 12 mA (10) IB = 6 mA
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 9.
Collector current as a function of collector-emitter voltage; typical values
Fig 10. Equivalent on-resistance as a function of collector current; typical values
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
8 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
IB 90 % input pulse (idealized waveform) IBon (100 %)
10 %
IBoff
IC 90 %
output pulse (idealized waveform)
IC (100 %)
10 % t td ton tr ts toff tf
006aaa003
Fig 11. BISS transistor switching time definition
VBB
VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mlb826
VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = -25 mA
Fig 12. Test circuit for switching times
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
9 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Plastic surface-mounted package; 6 leads SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 06-03-16
Fig 13. Package outline SOT666
PBSS4160V_3 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
10 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
9. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4160V
[1]
Package SOT666
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 4000 -115
For further information and the availability of packing methods, see Section 12.
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
11 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
10. Revision history
Table 9. Revision history Release date 20091211 Data sheet status Product data sheet Change notice Supersedes PBSS4160V_2 Document ID PBSS4160V_3 Modifications:
* * *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 2 "Discrete pinning": updated Figure 13 "Package outline SOT666": updated Product data sheet Objective data sheet PBSS4160V_1 -
PBSS4160V_2 PBSS4160V_1
20050131 20040423
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
12 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
11. Legal information
11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS4160V_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 December 2009
13 of 14
NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2009 Document identifier: PBSS4160V_3

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